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? irg7pg42udpbf irg7pg42ud-epbf 1 www.irf.com ? 2014 international rectifier submit datasheet feedback april 29, 2014 ? irg7pg42udpbf to-247ac e g c c e g c c irg7pg42ud-epbf to-247ad g c e gate collector emitter base part number package type standard pack orderable part number form quantity irg7pg42udpbf to-247ac tube 25 irg7pg42udpbf irg7pg42ud-epbf to-247ad tube 25 irg7pg42ud-epbf v ces = 1000v i c = 45a, t c = 100c t j(max) = 150c v ce(on) typ. = 1.7v @ i c = 30a e g n-channel c ? ? insulated gate bipolar transistor features ?? low v ce (on) trench igbt technology ?? low switching losses ?? square rbsoa ?? 100% of the parts tested for i lm ? ?? positive v ce (on) temperature co-efficient ?? ultra fast soft reco very co-pak diode ?? tight parameter distribution ?? lead-free package benefits ?? high efficiency in a wide range of applications ?? suitable for a wide range of switching frequencies due to low v ce(on) and low switching losses ?? rugged transient performance for increased reliability ?? excellent current sharing in parallel operation absolute maximum ratings ?? parameter max. units v ces collector-to-emitter voltage 1000 v i c @ t c = 25c continuous collector current (silicon limited) 85 ? i c @ t c = 100c continuous collector current (silicon limited) 45 i cm pulse collector current, v ge = 15v ? 90 i lm clamped inductive load current, v ge = 20v ? 120 a i f @ t c = 25c diode continuous forward current 85 i f @ t c = 100c diode continuous forward current 45 i fm diode maximum forward current ? 120 v ge continuous gate-to-emitter voltage 30 v p d @ t c = 25c maximum power dissipation 320 w p d @ t c = 100c maximum power dissipation 130 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in.(1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) applications ?? u.p.s. ? ?? welding ? ?? solar inverter ? ?? induction heating ? thermal resistance ??? parameter min. typ. max. units r jc (igbt) junction-to-case (igbt) ? ??? ??? 0.39 r jc (diode) junction-to-case (diode) ? ??? ??? 0.56 c/w r cs case-to-sink (flat, greased surface) ??? 0.24 ??? r ja junction-to-ambient (typical socket mount) ??? ??? 40
? irg7pg42udpbf/irg7pg42ud-epbf 2 www.irf.com ? 2014 international rectifier submit datasheet feedback april 29, 2014 electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1000 ? ? v v ge = 0v, i c = 100a ? ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 0.18 ? v/c v ge = 0v, i c = 2.0ma (25c-150c) v ce(on) collector-to-emitter saturation voltage ? 1.7 2.0 v i c = 30a, v ge = 15v, t j = 25c ? 2.1 ? ? i c = 30a, v ge = 15v, t j = 150c v ge(th) gate threshold voltage 3.0 ? 6.0 v v ce = v ge , i c = 1.0ma gfe forward transconductance ? 32 ? s v ce = 50v, i c = 30a, pw = 80s i ces collector-to-emitter leakage current ? 4.4 100 a v ge = 0v, v ce = 1000v ?? ? 1200 ? v ge = 0v, v ce = 1000v, t j = 150c v fm diode forward voltage drop ? 2.0 2.4 v i f = 30a ? 2.2 ? i f = 30a, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 30v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions q g total gate charge ? 157 ? i c = 30a q ge gate-to-emitter charge ? 21 ? nc ? v ge = 15v q gc gate-to-collector charge ? 69 ? ? v cc = 600v e on turn-on switching loss ? 2105 ? e off turn-off switching loss ? 1182 ? j i c = 30a, v cc = 600v, v ge = 15v e total total switching loss ? 3287 ? r g = 10 ? , l = 200h, t j = 25c t d(on) turn-on delay time ? 25 ? energy losses include tail & diode t r rise time ? 32 ? ns reverse recovery t d(off) turn-off delay time ? 229 ? t f fall time ? 63 ? e on turn-on switching loss ? 2978 ? e off turn-off switching loss ? 1968 ? j i c = 30a, v cc = 600v, v ge = 15v e total total switching loss ? 4946 ? r g = 10 ? , l = 200h, t j = 150c t d(on) turn-on delay time ? 19 ? energy losses include tail & diode t r rise time ? 32 ? ns reverse recovery t d(off) turn-off delay time ? 290 ? t f fall time ? 154 ? c ies input capacitance ? 3338 ? v ge = 0v c oes output capacitance ? 124 ? pf v cc = 30v c res reverse transfer capacitance ? 75 ? f = 1.0mhz t j = 150c, i c = 120a rbsoa reverse bias safe operating area full square v cc = 800v, vp 1000v rg = 10 ? , v ge = +20v to 0v erec reverse recovery energy of the diode ? 1475 ? j t j = 150c t rr diode reverse recovery time ? 153 ? ns v cc = 600v, i f = 30a i rr peak reverse recovery current ? 34 ? a rg = 10 ??? l = 1.0mh ? v ge(th) / ? t j threshold voltage temp. coefficient ? -14 ? mv/c v ce =v ge , i c = 1.0ma (25c - 150c) notes: ? v cc = 80% (v ces ), v ge = 20v, l = 22h, r g = 10 ? . ? pulse width limited by max. junction temperature. ? refer to an-1086 for guidelines for measuring v (br)ces safely. ? r ? is measured at t j of approximately 90c. ? calculated continuous current based on maximum allowable ju nction temperature. bond wire current limit is 78a. note that current limitations arising from heating of the dev ice leads may occur with some lead mounting arrangements.
? irg7pg42udpbf/irg7pg42ud-epbf 3 www.irf.com ? 2014 international rectifier submit datasheet feedback april 29, 2014 0.1 1 10 100 f , frequency ( khz ) 0 10 20 30 40 50 60 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 150c tsink = 90c gate drive as specified power dissipation = 95w 0 20 40 60 80 100 120 140 160 t c (c) 0 50 100 150 200 250 300 350 p t o t ( w ) 25 50 75 100 125 150 175 t c (c) 0 20 40 60 80 100 i c ( a ) fig. 1 - typical load current vs. frequency (load current = irms of fundamental) 1 10 100 1000 10000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 10sec 100sec tc = 25c tj = 150c single pulse dc 1msec fig. 2 - maximum dc collector current vs. case temperature 10 100 1000 10000 v ce (v) 1 10 100 1000 i c ( a ) fig. 5 - reverse bias soa t j = 150c; v ge = 20v fig. 3 - power dissipation vs. case temperature fig. 4 - forward soa t c = 25c, t j 150c; v ge = 15v
? irg7pg42udpbf/irg7pg42ud-epbf 4 www.irf.com ? 2014 international rectifier submit datasheet feedback april 29, 2014 0246810 v ce (v) 0 20 40 60 80 100 120 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0246810 v ce (v) 0 20 40 60 80 100 120 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v f (v) 0 20 40 60 80 100 120 i f ( a ) - 40c 25c 150c fig. 7 - typ. igbt output characteristics t j = 25c; tp = 80s 0246810 v ce (v) 0 20 40 60 80 100 120 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v fig. 6 - typ. igbt output characteristics t j = -40c; tp = 80s 4 8 12 16 20 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 15a i ce = 30a i ce = 60a fig. 9 - typ. diode forward voltage drop characteristics 4 8 12 16 20 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 15a i ce = 30a i ce = 60a fig. 8 - typ. igbt output characteristics t j = 150c; tp = 80s fig. 10 - typical v ce vs. v ge t j = -40c fig. 11 - typical v ce vs. v ge t j = 25c
? irg7pg42udpbf/irg7pg42ud-epbf 5 www.irf.com ? 2014 international rectifier submit datasheet feedback april 29, 2014 4 8 12 16 20 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 15a i ce = 30a i ce = 60a 4681012 v ge , gate-to-emitter voltage (v) 0 20 40 60 80 100 120 i c e , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 25c t j = 150c 0 10 20 30 40 50 60 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 20 40 60 80 100 r g ( ? ) 10 100 1000 10000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 17 - typ. switching time vs. r g t j = 150c; l = 200h; v ce = 600v, i ce = 30a; v ge = 15v fig. 15 - typ. switching time vs. i c t j = 150c; l = 200h; v ce = 600v, r g = 10 ? ; v ge = 15v fig. 13 - typ. transfer characteristics v ce = 50v 0 102030405060 i c (a) 0 1000 2000 3000 4000 5000 6000 7000 e n e r g y ( j ) e off e on fig. 12 - typical v ce vs. v ge t j = 150c 0 20 40 60 80 100 r g ( ? ) 1000 2000 3000 4000 5000 6000 e n e r g y ( j ) e on e off fig. 16 - typ. energy loss vs. r g t j = 150c; l = 200h; v ce = 600v, i ce = 30a; v ge = 15v fig. 14 - typ. energy loss vs. i c t j = 150c; l = 200h; v ce = 600v, r g = 10 ? ; v ge = 15v
? irg7pg42udpbf/irg7pg42ud-epbf 6 www.irf.com ? 2014 international rectifier submit datasheet feedback april 29, 2014 15 20 25 30 35 40 45 50 55 60 i f (a) 10 20 30 40 50 i r r ( a ) r g = ???? r g = ??? r g = ???? r g = ??? 0 200 400 600 800 1000 1200 1400 di f /dt (a/s) 2000 3000 4000 5000 6000 7000 8000 9000 q r r ( n c ) ???? ??? ???? ??? 30a 60a 15a 15 20 25 30 35 40 45 50 55 60 i f (a) 500 1000 1500 2000 2500 3000 3500 e n e r g y ( j ) r g = 5.0 ? r g = 10 ? r g = 47 ? r g = 100 ? fig. 21 - typ. diode q rr vs. di f /dt v cc = 600v; v ge = 15v; t j = 150c fig. 22 - typ. diode e rr vs. i f t j = 150c 0 200 400 600 800 1000 1200 di f /dt ( a/s) 20 25 30 35 40 i r r ( a ) fig. 20 - typ. diode i rr vs. di f /dt v cc = 600v; v ge = 15v; i f = 30a; t j = 150c fig. 18 - typ. diode i rr vs. i f t j = 150c 0 20 40 60 80 100 r g ( ?? 20 25 30 35 40 i r r ( a ) fig. 19 - typ. diode i rr vs. r g t j = 150c
? irg7pg42udpbf/irg7pg42ud-epbf 7 www.irf.com ? 2014 international rectifier submit datasheet feedback april 29, 2014 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig. 26 - maximum transient thermal impedance, junction-to-case (diode) ri (c/w) ? i (sec) ? 0.1254 0.000515 0.0937 0.000515 0.1889 0.001225 0.1511 0.018229 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ? i (sec) ? 0.1306 0.000313 0.1752 0.002056 0.0814 0.008349 0.0031 0.043100 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 fig. 25 - maximum transient thermal impedance, junction-to-case (igbt) 0 100 200 300 400 500 600 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 20406080100120140160180 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 600v v ces = 400v fig. 23 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 24 - typical gate charge vs. v ge i ce = 30a
? irg7pg42udpbf/irg7pg42ud-epbf 8 www.irf.com ? 2014 international rectifier submit datasheet feedback april 29, 2014 0 1k vcc dut l l rg 80 v dut vcc + - fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit l rg vcc dut / driver diode clamp / dut -5v switching loss fig.c.t.3 - switching loss circuit g force c sense 100k dut 0.0075f d1 22k e force c force e sense fig.c.t.4 - bvces filter circuit -100 0 100 200 300 400 500 600 700 800 900 -0.5 0 0.5 1 1.5 2 time(s) v ce (v) -10 0 10 20 30 40 50 60 70 80 90 i ce (a) 90% i ce 5% v ce 5% i ce eo f f l o s s t f fig. wf1 - typ. turn-off loss waveform @ t j = 150c using fig. ct.3
? irg7pg42udpbf/irg7pg42ud-epbf 9 www.irf.com ? 2014 international rectifier submit datasheet feedback april 29, 2014 to-247ac package outline dimensions are shown in millimeters (inches) year 1 = 2001 date code part number international logo rectifier assembly 56 57 irfpe30 135h line h indicates "lead-free" week 35 lot code in the assembly line "h" assembled on ww 35, 2001 notes: this part marking information applies to devices produced after 02/26/2001 note: "p" in assembly line position example: with assembly this is an irfpe30 lot code 5657 to-247ac part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ac package is not recommended for surface mount application.
? irg7pg42udpbf/irg7pg42ud-epbf 10 www.irf.com ? 2014 international rectifier submit datasheet feedback april 29, 2014 to-247ad package outline dimensions are shown in millimeters (inches) to-247ad part marking information assem bly year 0 = 2000 assem bled o n w w 35, 2000 in the assem bly line "h" exam ple: this is an irg p30b120kd-e lo t co de 5657 with assembly part number date code in t e r n a t io n a l rectifier lo g o 035h 5 6 5 7 week 35 lin e h lot code n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead-free" note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ad package is not recommended for surface mount application.
? irg7pg42udpbf/irg7pg42ud-epbf 11 www.irf.com ? 2014 international rectifier submit datasheet feedback april 29, 2014 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ qualification information ? qualification level industrial (per jedec jesd47f) ?? moisture sensitivity level to-247ac n/a rohs compliant yes to-247ad n/a ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release.

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